IRG4BC20KD-SPBF
- Mfr.Part #
- IRG4BC20KD-SPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT, 16A I(C), 600V V(BR)CES, N
- Stock
- 10,046
- In Stock :
- 10,046
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- REACH SVHC :
- No SVHC
- Rise Time :
- 37ns
- Gate-Emitter Voltage-Max :
- 20V
- Forward Current :
- 7A
- Switching Energy :
- 340μJ (on), 300μJ (off)
- Number of Pins :
- 3
- Length :
- 10.668mm
- Termination :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Max Forward Surge Current (Ifsm) :
- 32A
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 600V
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 600V
- Turn Off Time-Nom (toff) :
- 380 ns
- Element Configuration :
- Single
- Base Part Number :
- IRG4BC20KD-SPBF
- Power Dissipation :
- 60W
- Max Collector Current :
- 16A
- Turn-Off Delay Time :
- 180 ns
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 9A
- Collector Emitter Saturation Voltage :
- 2.27V
- Radiation Hardening :
- No
- Current Rating :
- 16A
- Fall Time-Max (tf) :
- 110ns
- Max Power Dissipation :
- 60W
- Polarity/Channel Type :
- N-Channel
- Weight :
- 2G
- Td (on/off) @ 25°C :
- 54ns/180ns
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Published :
- 2000
- Transistor Element Material :
- SILICON
- Gate Charge :
- 34nC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Gate-Emitter Thr Voltage-Max :
- 6V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Reverse Recovery Time :
- 37 ns
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Transistor Application :
- Motor Control
- Width :
- 4.826mm
- ECCN Code :
- EAR99
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Turn On Time :
- 88 ns
- Height :
- 4.83mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Input Type :
- Standard
- Factory Lead Time :
- 18 Weeks
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 54 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- IRG4BC20KD-SPBF

IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20KD-SPBF Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
IRG4BC20KD-SPBF Features
·Fast: Optimized for medium operating
frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations
·Industry standard D2Pak package·Lead-Free
IRG4BC20KD-SPBF Application
? AC & DC Motor Controls
? General Purpose Inverters
? Robotics
? Servo Controls
? UPS
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