IRG4PC50KPBF
- Mfr.Part #
- IRG4PC50KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 18,663
- In Stock :
- 18,663
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Case Connection :
- COLLECTOR
- Gate-Emitter Voltage-Max :
- 20V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Additional Feature :
- LOW CONDUCTION LOSS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.84V
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Fall Time-Max (tf) :
- 120ns
- Rise Time :
- 34ns
- Turn On Delay Time :
- 38 ns
- Gate Charge :
- 200nC
- Current Rating :
- 52A
- Turn-Off Delay Time :
- 160 ns
- Turn On Time :
- 72 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- Voltage - Rated DC :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- POWER CONTROL
- Peak Reflow Temperature (Cel) :
- 250
- Number of Elements :
- 1
- Max Collector Current :
- 52A
- JEDEC-95 Code :
- TO-247AC
- Published :
- 2000
- Factory Lead Time :
- 14 Weeks
- Mount :
- Through Hole
- Input Type :
- Standard
- Height :
- 20.3mm
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Width :
- 5.3mm
- Current - Collector Pulsed (Icm) :
- 104A
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200W
- Td (on/off) @ 25°C :
- 38ns/160ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 430 ns
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Power Dissipation :
- 200W
- Length :
- 15.875mm
- Test Condition :
- 480V, 30A, 5 Ω, 15V
- REACH SVHC :
- No SVHC
- Switching Energy :
- 490μJ (on), 680μJ (off)
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Gate-Emitter Thr Voltage-Max :
- 6V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 600V
- Datasheets
- IRG4PC50KPBF

IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50KPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is IRG4PC50KPBF.
IRG4PC50KPBF Features
?Low conduction losses combined with quick switching
?Compared to earlier generations, the most recent design offers tighter parameter dispersion and more efficiency.
?Lead-Free
IRG4PC50KPBF Applications
Switching applications
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