IRGB5B120KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

IGBT Type :

NPT

Current - Collector Pulsed (Icm) :

24A

Rise Time :

19ns

Max Operating Temperature :

150°C

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mount :

Through Hole

Switching Energy :

390μJ (on), 330μJ (off)

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Min Operating Temperature :

-55°C

Td (on/off) @ 25°C :

22ns/100ns

Input Type :

Standard

Power Dissipation :

89W

Width :

4.69mm

Voltage - Rated DC :

1.2kV

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

22 ns

Radiation Hardening :

No

Packaging :

Tube

Collector Emitter Breakdown Voltage :

1.2kV

Reverse Recovery Time :

160 ns

Length :

10.5156mm

Supplier Device Package :

TO-220AB

Published :

2004

Gate Charge :

25nC

Collector Emitter Saturation Voltage :

2V

Current Rating :

12A

Max Collector Current :

12A

Height :

15.24mm

Number of Pins :

3

Mounting Type :

Through Hole

Turn-Off Delay Time :

100 ns

Lead Free :

Lead Free

Current - Collector (Ic) (Max) :

12A

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

3V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Test Condition :

600V, 6A, 50Ohm, 15V

REACH SVHC :

No SVHC

Power - Max :

89W

Max Power Dissipation :

89W