IRGP30B120KDPBF

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Mfr.Part #
IRGP30B120KDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 60A 300W TO247AC
Stock
40,166
In Stock :
40,166

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
IGBT Type :
NPT
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
60A
Reverse Recovery Time :
300ns
Package / Case :
TO-247-3
Published :
1999
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Test Condition :
600V, 25A, 5Ohm, 15V
Min Operating Temperature :
-55°C
Height :
20.701mm
Collector Emitter Saturation Voltage :
2.28V
Packaging :
Bulk
Max Operating Temperature :
150°C
Collector Emitter Voltage (VCEO) :
4V
Current - Collector (Ic) (Max) :
60A
Length :
15.875mm
Switching Energy :
1.07mJ (on), 1.49mJ (off)
Voltage - Collector Emitter Breakdown (Max) :
1200V
Power Dissipation :
300W
Collector Emitter Breakdown Voltage :
1.2kV
Radiation Hardening :
No
Input Type :
Standard
Vce(on) (Max) @ Vge, Ic :
4V @ 15V, 60A
Gate Charge :
169nC
Power - Max :
300W
Number of Pins :
3
Factory Lead Time :
22 Weeks
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Pulsed (Icm) :
120A
Width :
5.3086mm
Max Power Dissipation :
300W
RoHS Status :
RoHS Compliant
Datasheets
IRGP30B120KDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP30B120KDPBF from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, IRGP30B120KDPBF pinout, IRGP30B120KDPBF datasheet PDF, IRGP30B120KDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP30B120KDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP30B120KDPBF


IRGP30B120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP30B120KDPBF Description

 

IRGP30B120KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP30B120KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IRGP30B120KDPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRGP30B120KDPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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