IRGS14C40LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Width :

4.83mm

Rise Time :

2.8ns

Mounting Type :

Surface Mount

Td (on/off) @ 25°C :

900ns/6μs

Published :

2000

Current Rating :

14A

Element Configuration :

Single

Power Dissipation :

125W

Factory Lead Time :

9 Weeks

Lead Free :

Lead Free

Height :

4.699mm

Number of Elements :

1

Turn-Off Delay Time :

6 μs

Terminal Finish :

MATTE TIN OVER NICKEL

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Base Part Number :

IRGS14C40LPBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

430V

Transistor Element Material :

SILICON

Gate Charge :

27nC

Vce(on) (Max) @ Vge, Ic :

1.75V @ 5V, 14A

Additional Feature :

LOW SATURATION VOLTAGE

Gate-Emitter Thr Voltage-Max :

2.2V

Max Collector Current :

20A

Termination :

SMD/SMT

Length :

10.668mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Packaging :

Tube

Operating Temperature :

-40°C~175°C TJ

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Collector Emitter Saturation Voltage :

1.4V

Turn On Delay Time :

900 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

430V

Time@Peak Reflow Temperature-Max (s) :

30

Input Type :

Logic

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Terminations :

2

Max Power Dissipation :

125W

Gate-Emitter Voltage-Max :

12V

Transistor Application :

AUTOMOTIVE IGNITION

Collector Emitter Voltage (VCEO) :

1.75V

Turn On Time :

3700 ns