IRL1004
- Mfr.Part #
- IRL1004
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 130A TO220AB
- Stock
- 16,404
- In Stock :
- 16,404
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 25V
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Published :
- 1999
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Drain-source On Resistance-Max :
- 0.0065ohm
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Power Dissipation-Max :
- 200W Tc
- Pulsed Drain Current-Max (IDM) :
- 520A
- Drain Current-Max (Abs) (ID) :
- 130A
- Number of Terminations :
- 3
- Series :
- HEXFET®
- Vgs (Max) :
- ±16V
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 78A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 40V
- Surface Mount :
- No
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 4.5V
- Datasheets
- IRL1004

N-Channel Tube 6.5m Ω @ 78A, 10V ±16V 5330pF @ 25V 100nC @ 4.5V 40V TO-220-3
IRL1004 Description
International Rectifier's Fifth Generation HEXFET? power MOSFETs use innovative processing techniques to provide the lowest achievable on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRL1004 Features
-
Logic-Level Gate Drive
-
Advanced Process Technology
-
Ultra-Low On-Resistance
-
Dynamic dv/dt Rating
-
175°C Operating Temperature
-
Fast Switching
-
Fully Avalanche Rated
IRL1004 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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