IRL1004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Threshold Voltage :

1V

Published :

2004

Height :

8.77mm

Power Dissipation :

200W

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Rise Time :

210ns

Mounting Type :

Through Hole

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±16V

Pulsed Drain Current-Max (IDM) :

520A

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

700 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.6426mm

Resistance :

6.5mOhm

Turn-Off Delay Time :

25 ns

Voltage - Rated DC :

40V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Continuous Drain Current (ID) :

130A

Dual Supply Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

16 ns

Package / Case :

TO-220-3

Lead Free :

Lead Free

Power Dissipation-Max :

200W Tc

Current Rating :

130A

Series :

HEXFET®

Number of Elements :

1

Fall Time (Typ) :

14 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

3

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Width :

4.82mm

Mount :

Through Hole

Contact Plating :

Tin

Nominal Vgs :

1 V