IXDN55N120D1

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Pbfree Code :

yes

Height :

9.6mm

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

4

Continuous Collector Current :

100A

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Product Status :

Active

Number of Pins :

4

Package Type :

SOT-227B

Published :

2007

Switching Speed :

1MHz

Gate-Emitter Thr Voltage-Max :

6.5V

Input Capacitance :

3.3nF

Product Type :

IGBT Transistors

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Cies) @ Vce :

3.3nF @ 25V

Collector Emitter Saturation Voltage :

2.3V

JESD-30 Code :

R-XUFM-X4

Reach Compliance Code :

Compliant

Mounting Style :

Screw Mounts

Power Dissipation-Max (Abs) :

450 W

Collector Emitter Breakdown Voltage :

1.2kV

Lead Free :

Lead Free

Power Dissipation :

450W

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 55A

Number of Terminals :

4

Number of Elements :

1

Turn On Time :

170 ns

Channel Type :

N

Brand :

IXYS

Mount :

Chassis Mount, Screw, Surface Mount

Manufacturer :

IXYS

Turn-Off Delay Time :

500 ns

Terminal Position :

UPPER

Transistor Application :

Motor Control

Pin Count :

4

Length :

38.2mm

Turn Off Time-Nom (toff) :

570 ns

Current - Collector (Ic) (Max) :

100A

RoHS :

Details

Collector Current-Max (IC) :

100 A

Supplier Device Package :

SOT-227B

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

3.8mA

Max Collector Current :

100A

Packaging :

Tube

Package / Case :

SOT-227-4, miniBLOC

Base Product Number :

IXDN55

Package :

Tube

Configuration :

Single

Series :

--

Factory Lead Time :

28 Weeks

Weight :

38.000013g

Mounting Type :

Chassis Mount

Turn On Delay Time :

100 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

NTC Thermistor :

No

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+150 °C

IGBT Type :

NPT

Power - Max :

450W

Input :

Standard

Additional Feature :

UL RECOGNIZED

Dimensions :

38.2 x 25.07 x 9.6mm

Width :

25.07mm

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Terminal Finish :

Nickel (Ni)

Max Power Dissipation :

450W

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Technology :

Si

Collector Emitter Voltage (VCEO) :

1.2kV

Minimum Operating Temperature :

-40 °C

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

1200 V

Product Category :

IGBT Transistors