IXTA76P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

FET Feature :

--

Terminal Finish :

PURE TIN

Terminal Position :

Single

Continuous Drain Current (ID) :

76A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Maximum Operating Temperature :

+ 150 C

Height :

4.83 mm

Vgs (Max) :

±15V

Power Dissipation-Max :

298W Tc

Mounting Style :

SMD/SMT

Series :

TrenchP™

Tradename :

TrenchP

Length :

9.65 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

298W (Tc)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

298 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Type :

TrenchP Power MOSFET

Radiation Hardening :

No

Pin Count :

4

Transistor Type :

1 P-Channel

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Base Product Number :

IXTA76

Published :

2010

Mount :

Surface Mount

Package :

Tube

Factory Lead Time :

17 Weeks

Product Status :

Active

Channel Type :

P Channel

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

76 A

Pulsed Drain Current-Max (IDM) :

230 A

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Power Dissipation :

298W

Number of Terminations :

2

Product Category :

MOSFET

Terminal Form :

Gull wing

Case Connection :

DRAIN

Packaging :

Tube

Transistor Polarity :

P-Channel

Lead Free :

Lead Free

Product Type :

MOSFET

JEDEC-95 Code :

TO-263AA

DS Breakdown Voltage-Min :

100 V

Brand :

IXYS

Avalanche Energy Rating (Eas) :

1000 mJ

Polarity/Channel Type :

P-Channel

Continuous Drain Current Id :

76A

Gate to Source Voltage (Vgs) :

15V

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263 (IXTA)

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

76A Tc

RoHS :

Details

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Channel Mode :

Enhancement

Qualification :

-

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.024Ohm

Width :

10.41 mm

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Number of Channels :

1 Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Number of Terminals :

2

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Rise Time :

40 ns

Number of Elements :

1