IXTR210P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchP™

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.008Ohm

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Package :

Tube

RoHS :

Details

Pin Count :

3

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

Transistor Polarity :

P-Channel

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

800A

Number of Terminations :

3

Supplier Device Package :

ISOPLUS247™

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Package / Case :

TO-247-3

FET Type :

P-Channel

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

69500pF @ 25V

FET Feature :

--

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

158A

Rds On (Max) @ Id, Vgs :

8m Ω @ 105A, 10V

Power Dissipation-Max (Abs) :

390 W

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Status :

Active

DS Breakdown Voltage-Min :

100V

Base Product Number :

IXTR210

Polarity/Channel Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

28 Weeks

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Continuous Drain Current (ID) :

195A

Terminal Position :

Single

Power Dissipation (Max) :

595W (Tc)

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

740nC @ 10V

Surface Mount :

No

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

3000 mJ

Product Type :

MOSFET

Power Dissipation-Max :

595W Tc