IXTR30N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Drain to Source Breakdown Voltage :

250V

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1000 mJ

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSIP-T3

Transistor Polarity :

N-Channel

Package / Case :

ISOPLUS247™

Manufacturer :

IXYS

Base Product Number :

IXTR30

Series :

-

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

75m Ω @ 15A, 10V

ECCN Code :

EAR99

Pbfree Code :

yes

Width :

5.21 mm

Power Dissipation :

150W

Supplier Device Package :

ISOPLUS247™

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Subcategory :

MOSFETs

Surface Mount :

No

Vgs (Max) :

±20V

Pin Count :

3

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

25A Tc

FET Feature :

-

DS Breakdown Voltage-Min :

250 V

Pulsed Drain Current-Max (IDM) :

120A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate to Source Voltage (Vgs) :

20V

Product Status :

Active

Packaging :

Tube

Factory Lead Time :

10 Weeks

Package :

Tube

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

RoHS :

Details

Published :

2001

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Case Connection :

Isolated

Element Configuration :

Single

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

250V

Number of Channels :

1 Channel

Product Type :

MOSFET

Length :

16.13 mm

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Configuration :

Single

Mounting Style :

Through Hole

Rise Time :

19ns

Product Category :

MOSFET

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

79 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

150W (Tc)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

17 ns

JESD-609 Code :

e1

Continuous Drain Current (ID) :

25A

Drain-source On Resistance-Max :

0.075Ohm

Transistor Type :

1 N-Channel

Power Dissipation-Max :

150W Tc

Height :

21.34 mm