JAN2N2219A
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- Mfr.Part #
- JAN2N2219A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 43,750
- In Stock ：
- 43,750
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Reference Standard :
- MIL-19500/251L
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Pins :
- 3
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10nA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~200°C TJ
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Power - Max :
- 800mW
- Published :
- 2007
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Type :
- NPN
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- HTS Code :
- 8541.21.00.95
- Series :
- Military, MIL-PRF-19500/251
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- JAN2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2219AL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 800mA volts.
JAN2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2219AL Applications
There are a lot of Microsemi Corporation
JAN2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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