JAN2N5582
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- Mfr.Part #
- JAN2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 16,268
- In Stock ：
- 16,268
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Contact Plating :
- Lead, Tin
- ECCN Code :
- EAR99
- Power - Max :
- 500mW
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Published :
- 2002
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 1V
- HTS Code :
- 8541.21.00.95
- Pbfree Code :
- No
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Max Collector Current :
- 800mA
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- JESD-30 Code :
- O-MBCY-W3
- Turn Off Time-Max (toff) :
- 300ns
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/423
- Turn On Time-Max (ton) :
- 35ns
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Factory Lead Time :
- 23 Weeks
- Qualification Status :
- Qualified
- Reference Standard :
- MIL-19500/423E
- Datasheets
- JAN2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N5582 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JAN2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N5582 Applications
There are a lot of Microsemi Corporation
JAN2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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