JANTX2N6058
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- Mfr.Part #
- JANTX2N6058
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 12A TO3
- Stock
- 663
- In Stock ：
- 663
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 12A
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- No
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Breakdown Voltage :
- 80V
- Power - Max :
- 150W
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Factory Lead Time :
- 20 Weeks
- Packaging :
- Bulk
- JESD-30 Code :
- O-MBFM-P2
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 150W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Collector Emitter Voltage (VCEO) :
- 80V
- Lead Free :
- Contains Lead
- Series :
- Military, MIL-PRF-19500/502
- Qualification Status :
- Qualified
- Contact Plating :
- Lead, Tin
- Case Connection :
- COLLECTOR
- Polarity :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Terminations :
- 2
- Collector Emitter Saturation Voltage :
- 3V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Pin Count :
- 2
- Datasheets
- JANTX2N6058
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6058 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.
JANTX2N6058 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N6058 Applications
There are a lot of Microsemi Corporation
JANTX2N6058 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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