KSD882YS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Weight :

761mg

Current - Collector Cutoff (Max) :

1μA ICBO

Max Collector Current :

3A

Case Connection :

Isolated

Power Dissipation :

1W

Collector Base Voltage (VCBO) :

40V

Base Part Number :

KSD882

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Element Configuration :

Single

Packaging :

Bulk

hFE Min :

60

Mounting Type :

Through Hole

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

30V

Radiation Hardening :

No

Transition Frequency :

90MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Package / Case :

TO-225AA, TO-126-3

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Mount :

Through Hole

Frequency :

90MHz

Published :

2005

Number of Pins :

3

Pbfree Code :

yes

Current Rating :

3A

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

300mV

ECCN Code :

EAR99

Voltage - Rated DC :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Max Power Dissipation :

1W

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

90MHz