KSD880YTU
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- Mfr.Part #
- KSD880YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220-3
- Stock
- 61,398
- In Stock ：
- 61,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.5mm
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Max Power Dissipation :
- 30W
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Current Rating :
- 3A
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Height :
- 14.2mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 30W
- Mount :
- Through Hole
- Weight :
- 1.8g
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 400mV
- Frequency :
- 3MHz
- Length :
- 9.9mm
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- KSD880
- Radiation Hardening :
- No
- Packaging :
- Tube
- hFE Min :
- 60
- Max Collector Current :
- 3A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Published :
- 2000
- Datasheets
- KSD880YTU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSD880YTU Overview
This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 1V @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.
KSD880YTU Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD880YTU Applications
There are a lot of ON Semiconductor
KSD880YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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