KSP05TA
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- Mfr.Part #
- KSP05TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 1,880
- In Stock ：
- 1,880
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Current Rating :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 50
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 17 Weeks
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Power Dissipation :
- 625mW
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Base Part Number :
- KSP05
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Datasheets
- KSP05TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP05TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KSP05TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP05TA Applications
There are a lot of ON Semiconductor
KSP05TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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