KST4401MTF
- Mfr.Part #
- KST4401MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 35,454
- In Stock :
- 35,454
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Turn Off Time-Max (toff) :
- 255ns
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Published :
- 2002
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- KST4401
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 600mA
- Voltage - Rated DC :
- 40V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Transition Frequency :
- 250MHz
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Max Breakdown Voltage :
- 40V
- Current Rating :
- 600mA
- Height :
- 970μm
- Terminal Position :
- Dual
- Max Operating Temperature :
- 150°C
- Frequency :
- 250MHz
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 350mW
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- 750mV
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Power Dissipation :
- 350mW
- Transistor Application :
- SWITCHING
- Datasheets
- KST4401MTF

NPN 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST4401MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST4401MTF Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
KST4401MTF Applications
There are a lot of ON Semiconductor
KST4401MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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