KST56MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

80V

Transistor Application :

AMPLIFIER

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

Frequency :

50MHz

Published :

2008

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Element Configuration :

Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Weight :

30mg

Transistor Type :

PNP

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Emitter Base Voltage (VEBO) :

-4V

Gain Bandwidth Product :

50MHz

Mounting Type :

Surface Mount

Transition Frequency :

50MHz

hFE Min :

50

Collector Base Voltage (VCBO) :

-80V

Current Rating :

-500mA

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-250mV

Max Collector Current :

500mA

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Number of Terminations :

3

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Power Dissipation :

350mW

Voltage - Rated DC :

-80V

Current - Collector Cutoff (Max) :

100nA

Packaging :

Tape and Reel (TR)

Base Part Number :

KST56

Terminal Position :

Dual

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

350mW