MBR200150CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Factory Lead Time :

6 Weeks

Terminal Position :

UPPER

Current - Reverse Leakage @ Vr :

3mA @ 150V

HTS Code :

8541.10.00.80

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Phases :

1

Max Reverse Voltage (DC) :

150V

Application :

Power

Reverse Current-Max :

3000μA

Lifecycle Status :

Production (Last Updated: 5 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

ECCN Code :

EAR99

Element Configuration :

Common Cathode

Diode Element Material :

SILICON

Packaging :

Bulk

Mounting Type :

Chassis Mount

Diode Type :

Schottky

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Chassis Mount

Operating Temperature - Junction :

-55°C~150°C

JESD-30 Code :

R-PUFM-X2

Package / Case :

Twin Tower

Non-rep Pk Forward Current-Max :

1500A

Operating Temperature (Max) :

150°C

Voltage - Forward (Vf) (Max) @ If :

880mV @ 100A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration :

1 Pair Common Cathode

Number of Terminations :

2

Terminal Form :

UNSPECIFIED

RoHS Status :

RoHS Compliant

Average Rectified Current :

100A