MBR20035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Average Rectified Current :

200A

Peak Reverse Current :

1A

Diode Configuration :

1 Pair Common Cathode

Factory Lead Time :

6 Weeks

Package / Case :

Twin Tower

JESD-30 Code :

R-PUFM-X2

Current - Reverse Leakage @ Vr :

5mA @ 20V

Packaging :

Bulk

HTS Code :

8541.10.00.80

Min Operating Temperature :

-40°C

Mount :

Chassis Mount

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Diode Element Material :

SILICON

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminations :

2

Application :

Power

Current - Average Rectified (Io) :

200A DC

Max Reverse Voltage (DC) :

35V

Max Repetitive Reverse Voltage (Vrrm) :

35V

Number of Phases :

1

Max Surge Current :

1.5kA

Diode Type :

Schottky

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Forward Current :

200A

Lifecycle Status :

Production (Last Updated: 4 months ago)

Published :

2010

Element Configuration :

Common Cathode

Terminal Position :

UPPER

Number of Elements :

2

Output Current-Max :

100A