MJD117-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

20W

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Transistor Element Material :

SILICON

Height :

6.22mm

Transition Frequency :

25MHz

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

MJD117

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Pin Count :

4

Collector Emitter Saturation Voltage :

2V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Transistor Type :

PNP - Darlington

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

20μA

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Current Rating :

-2A

Collector Emitter Breakdown Voltage :

100V

Width :

2.38mm

Max Power Dissipation :

1.75W

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

2A

Number of Elements :

1

Mounting Type :

Through Hole

Lead Free :

Lead Free

Polarity :

PNP

ECCN Code :

EAR99

Frequency - Transition :

25MHz

Collector Base Voltage (VCBO) :

100V

Continuous Collector Current :

2A

Halogen Free :

Halogen Free

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

-100V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Published :

2006

Length :

6.73mm