MJD127T4
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- Mfr.Part #
- MJD127T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A DPAK
- Stock
- 4,426
- In Stock ：
- 4,426
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- -100V
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 8A
- Published :
- 2005
- Number of Elements :
- 1
- Transition Frequency :
- 4MHz
- Length :
- 6.73mm
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency - Transition :
- 4MHz
- Surface Mount :
- yes
- Max Power Dissipation :
- 1.75W
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 20W
- Width :
- 6.22mm
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Current Rating :
- -8A
- Packaging :
- Tape and Reel (TR)
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- MJD127
- JESD-30 Code :
- R-PSSO-G2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Max Collector Current :
- 8A
- Height :
- 2.38mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP - Darlington
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Datasheets
- MJD127T4
PNP - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
MJD127T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127T4G Applications
There are a lot of ON Semiconductor
MJD127T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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