MJD243G

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Mfr.Part #
MJD243G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 4A DPAK
Stock
16
In Stock :
16

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Collector Emitter Saturation Voltage :
600mV
Terminal Form :
Gull wing
Pbfree Code :
yes
Number of Elements :
1
Max Collector Current :
4A
Emitter Base Voltage (VEBO) :
7V
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Current - Collector Cutoff (Max) :
100nA ICBO
Base Part Number :
MJD243
Power Dissipation :
1.4W
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
40
Voltage - Rated DC :
100V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Collector Emitter Breakdown Voltage :
100V
Transistor Type :
NPN
Length :
6.35mm
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
100V
Width :
6.35mm
ECCN Code :
EAR99
Radiation Hardening :
No
Transition Frequency :
40MHz
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
100V
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Gain Bandwidth Product :
40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Number of Pins :
3
Surface Mount :
yes
Published :
2007
hFE Min :
40
Frequency :
40MHz
Element Configuration :
Single
Pin Count :
3
Height :
6.35mm
JESD-30 Code :
R-PSSO-G2
Polarity/Channel Type :
NPN
Packaging :
Tube
Current Rating :
4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
4.535924g
Max Power Dissipation :
1.4W
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Datasheets
MJD243G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD243G from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:MJD243, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, MJD243G pinout, MJD243G datasheet PDF, MJD243G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD243G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD243G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

MJD243G Overview


In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).40MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

MJD243G Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz


MJD243G Applications


There are a lot of ON Semiconductor
MJD243G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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