MMBT100

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

VCEsat-Max :

0.2 V

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Transistor Application :

AMPLIFIER

Transition Frequency :

250MHz

Height :

970μm

Terminal Position :

Dual

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

75V

Gain Bandwidth Product :

250MHz

Current - Collector Cutoff (Max) :

50nA

JESD-609 Code :

e3

Weight :

30mg

Contact Plating :

Tin

Number of Elements :

1

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

45V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

39 Weeks

Base Part Number :

MMBT100

Max Power Dissipation :

350mW

Frequency :

250MHz

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Voltage - Rated DC :

45V

RoHS Status :

ROHS3 Compliant

hFE Min :

100

Published :

2008

Width :

1.3mm

Number of Pins :

3

Max Collector Current :

500mA

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Collector-Base Capacitance-Max :

4.5pF

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Number of Terminations :

3

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Current Rating :

500mA

Length :

2.9mm

Element Configuration :

Single

Collector Emitter Saturation Voltage :

400mV

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Mount :

Surface Mount

Max Breakdown Voltage :

45V

Collector Emitter Breakdown Voltage :

45V

Terminal Form :

Gull wing

Power Dissipation :

350mW