MPS650ZL1
- Mfr.Part #
- MPS650ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A TO92
- Stock
- 33,034
- In Stock :
- 33,034
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 2A
- Transistor Type :
- NPN
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Qualification Status :
- COMMERCIAL
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- JESD-30 Code :
- O-PBCY-T3
- Frequency - Transition :
- 75MHz
- Transition Frequency :
- 75MHz
- Peak Reflow Temperature (Cel) :
- 240
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- TIN LEAD
- Additional Feature :
- EUROPEAN PART NUMBER
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power - Max :
- 625mW
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Transistor Element Material :
- SILICON
- Datasheets
- MPS650ZL1

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS650ZL1 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.75MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 40V.
MPS650ZL1 Features
the DC current gain for this device is 75 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 75MHz
MPS650ZL1 Applications
There are a lot of Rochester Electronics, LLC
MPS650ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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