MPS751
- Mfr.Part #
- MPS751
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92-3
- Stock
- 255
- In Stock :
- 255
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MPS751
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Pin Count :
- 3
- Published :
- 2002
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 4.58mm
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- -80V
- Transition Frequency :
- 75MHz
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -2A
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Packaging :
- Bulk
- Radiation Hardening :
- No
- hFE Min :
- 75
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 240
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Power Dissipation :
- 625mW
- Frequency :
- 75MHz
- Pbfree Code :
- yes
- Weight :
- 201mg
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- Length :
- 4.58mm
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- 500mV
- Mount :
- Through Hole
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 75MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Number of Terminations :
- 3
- Width :
- 3.86mm
- Datasheets
- MPS751

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS751 Overview
In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor
MPS751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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