MPSA05RA
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- Mfr.Part #
- MPSA05RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 4,664
- In Stock ：
- 4,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Weight :
- 201mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Published :
- 2002
- Voltage - Rated DC :
- 60V
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 3.86mm
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Copper, Silver, Tin
- Length :
- 4.58mm
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Height :
- 4.58mm
- Current Rating :
- 500mA
- hFE Min :
- 100
- Transition Frequency :
- 100MHz
- Base Part Number :
- MPSA05
- Number of Elements :
- 1
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- MPSA05RA
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA05RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA05RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA05RA Applications
There are a lot of ON Semiconductor
MPSA05RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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