NST3906DP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

200mA

Height :

400μm

Length :

1.05mm

Collector Emitter Voltage (VCEO) :

40V

Power Dissipation :

280mW

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Power - Max :

350mW

Package / Case :

SOT-963

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

JESD-609 Code :

e3

Transition Frequency :

250MHz

Number of Elements :

2

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

hFE Min :

60

Factory Lead Time :

2 Weeks

Gain Bandwidth Product :

250MHz

Transistor Application :

AMPLIFIER

Turn On Time-Max (ton) :

70ns

Max Breakdown Voltage :

40V

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

280mW

Packaging :

Tape and Reel (TR)

Width :

850μm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Polarity :

PNP

REACH SVHC :

No SVHC

Base Part Number :

NST3906D

Number of Terminations :

6

Turn Off Time-Max (toff) :

300ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

-400mV

Published :

2008

Terminal Finish :

Tin (Sn)

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Number of Pins :

6

Frequency :

250MHz

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Type :

2 PNP (Dual)

Radiation Hardening :

No

Pbfree Code :

yes