NSV40200LT1G
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- Mfr.Part #
- NSV40200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 5,880
- In Stock ：
- 5,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- NSS40200
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Max Frequency :
- 100MHz
- Published :
- 2011
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -40V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- Weight :
- 1.437803g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Max Power Dissipation :
- 460mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 3.04mm
- Height :
- 1.11mm
- Vce Saturation (Max) @ Ib, Ic :
- 170mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.64mm
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- -135mV
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Datasheets
- NSV40200LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV40200LT1G Overview
This device has a DC current gain of 220 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -135mV.A VCE saturation (Max) of 170mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 2A volts is possible.
NSV40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 100MHz
NSV40200LT1G Applications
There are a lot of ON Semiconductor
NSV40200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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