NTE108-1

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

TO-106-3 Domed

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.625 W

Terminal Position :

BOTTOM

Reach Compliance Code :

Unknown

JESD-30 Code :

O-PBCY-W3

Number of Terminals :

3

Power - Max :

625mW

Gain :

15dB

Operating Temperature :

-55°C ~ 150°C (TJ)

Configuration :

Single

HTS Code :

8541.21.00.75

Series :

-

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

15 V

Supplier Device Package :

TO-106

DC Current Gain-Min (hFE) :

20

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-106

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Pin Count :

3

Number of Elements :

1

Transistor Type :

NPN

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Manufacturer :

NTE Electronics

Terminal Form :

Wire

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

50mA

Package :

Bag

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Product Status :

Active

Frequency - Transition :

600MHz

Surface Mount :

No

Polarity/Channel Type :

NPN

Collector Current-Max (IC) :

0.05 A