NTE61MCP
- Mfr.Part #
- NTE61MCP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO3
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Configuration :
- Single
- Power - Max :
- 250 W
- Case Connection :
- COLLECTOR
- Collector Current-Max (IC) :
- 20 A
- Voltage - Collector Emitter Breakdown (Max) :
- 140 V
- Terminal Position :
- BOTTOM
- DC Current Gain-Min (hFE) :
- 150
- Package :
- Bag
- Series :
- -
- Supplier Device Package :
- TO-3
- Emitter-Base Voltage :
- 5(V)
- DC Current Gain :
- 25
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 20 A
- Category :
- Bipolar Power
- Power Dissipation Ambient-Max :
- 250 W
- JEDEC-95 Code :
- TO-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Terminal Form :
- PIN/PEG
- Subcategory :
- BIP General Purpose Small Signal
- Qualification Status :
- Not Qualified
- Collector-Emitter Voltage-Max :
- 140 V
- Pin Count :
- 2 +Tab
- Additional Feature :
- MATCHED COMPLIMENTARY PAIR CONTAINS NTE60 AND NTE61
- Collector Current (DC) :
- 20(A)
- ECCN Code :
- EAR99
- Mounting :
- Through Hole
- Number of Terminals :
- 2
- Reach Compliance Code :
- Unknown
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 250μA
- Frequency :
- 2(MHz)
- Manufacturer :
- NTE Electronics
- JESD-30 Code :
- O-MBFM-P2
- Operating Temp Range :
- -65C to 200C
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-204AA, TO-3
- Package Type :
- TO-3
- Collector-Base Voltage :
- 140(V)
- Operating Temperature Classification :
- Military
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A, 2V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 2MHz
- Transistor Polarity :
- PNP
- Polarity/Channel Type :
- NPN AND PNP
- Output Power :
- Not Required(W)
- Package Shape :
- Round
- Rad Hardened :
- No
- Power Dissipation :
- 250(W)
- Datasheets
- NTE61MCP

PNP -65°C ~ 200°C (TJ) 250μA 1 Elements SILICON NPN AND PNP TO-204AA, TO-3 Through Hole
NTE61MCP Overview
This device has a DC current gain of 25 @ 5A, 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 500mA, 5A means Ic has reached its maximum value(saturated).Product package TO-3 comes from the supplier.140 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 140 VV - Maximum voltage.
NTE61MCP Features
the DC current gain for this device is 25 @ 5A, 2V
the vce saturation(Max) is 1V @ 500mA, 5A
the supplier device package of TO-3
NTE61MCP Applications
There are a lot of NTE Electronics, Inc
NTE61MCP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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