NTHD3101FT3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

13A

Surface Mount :

yes

Published :

2006

Terminal Form :

C BEND

Lead Free :

Contains Lead

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

80m Ω @ 3.2A, 4.5V

Package / Case :

8-SMD, Flat Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

FET Feature :

Schottky Diode (Isolated)

Power Dissipation-Max :

1.1W Ta

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

3.2A Tj

Current Rating :

-4.4A

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

12.4 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

Power Dissipation :

1.1W

Turn-Off Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 10V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Voltage - Rated DC :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

Rise Time :

11.7ns

Drain to Source Breakdown Voltage :

-20V

Pin Count :

8

Continuous Drain Current (ID) :

3.2A