NTHD3133PFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.2A Tj

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn-Off Delay Time :

16 ns

FET Feature :

Schottky Diode (Isolated)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Number of Pins :

8

Terminal Form :

C BEND

Fall Time (Typ) :

11.7 ns

Published :

2007

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Power Dissipation :

1.1W

Continuous Drain Current (ID) :

3.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

80m Ω @ 3.2A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.1W Ta

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Number of Terminations :

8

Rise Time :

11.7ns