NX3008CBKV,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-563, SOT-666

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 350mA, 4.5V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 15V

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2011

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Power - Max :

500mW

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Additional Feature :

LOW THRESHOLD

Drain Current-Max (Abs) (ID) :

0.4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

N and P-Channel

Pin Count :

6

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

400mA 220mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-F6

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Terminal Form :

Flat

FET Feature :

Logic Level Gate