NX3008NBKMB315

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

530mA Ta

Max Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Element Configuration :

Single

Rise Time :

11ns

Power Dissipation :

715mW

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 15V

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Terminal Position :

BOTTOM

Published :

2012

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

3

Turn On Delay Time :

15 ns

Number of Pins :

3

Vgs (Max) :

±8V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

19 ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

530mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

69 ns

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 350mA, 4.5V

Power Dissipation-Max :

360mW Ta 2.7W Tc

Pin Count :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

JESD-609 Code :

e3

Package / Case :

3-XFDFN

Packaging :

Tape and Reel (TR)