PBSS301ND,115
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- Mfr.Part #
- PBSS301ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS301ND - SMALL SIGNA
- Stock
- 2,457
- In Stock ：
- 2,457
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 4A
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 600mA, 6A
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- 6-TSOP
- Package / Case :
- SC-74, SOT-457
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Power Dissipation :
- 2.5W
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 20V
- Min Operating Temperature :
- -65°C
- Polarity :
- NPN
- Collector Base Voltage (VCBO) :
- 20V
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 100MHz
- Base Part Number :
- PBSS301N
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Max Breakdown Voltage :
- 20V
- Power - Max :
- 1.1W
- Max Collector Current :
- 4A
- Transistor Type :
- NPN
- Number of Pins :
- 6
- Datasheets
- PBSS301ND,115
NPN 150°C TJ 100nA 1 Elements SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS301ND,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 20V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 20V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.
PBSS301ND,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 420mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the supplier device package of 6-TSOP
PBSS301ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS301ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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