PD84006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

150°C

Power Dissipation :

59W

Transistor Type :

LDMOS

Drain to Source Voltage (Vdss) :

25V

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn) - annealed

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Max Power Dissipation :

59W

Number of Terminations :

2

Gain :

15dB

Pin Count :

10

Base Part Number :

PD84006

Current - Test :

150mA

Drain Current-Max (Abs) (ID) :

5A

Terminal Position :

Dual

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Output Power :

6W

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G2

Current Rating :

5A

Continuous Drain Current (ID) :

5A

Case Connection :

SOURCE

Packaging :

Tube

Peak Reflow Temperature (Cel) :

250

Voltage - Test :

7.5V

Frequency :

870MHz

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Factory Lead Time :

52 Weeks

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

15V