PD84008L-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Current Rating :

7A

Mount :

Surface Mount

Number of Elements :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

225

Voltage - Test :

7.5V

Frequency :

870MHz

JESD-30 Code :

S-PQCC-N5

Terminal Position :

QUAD

Min Operating Temperature :

-65°C

Polarity/Channel Type :

N-Channel

Package / Case :

8-PowerVDFN

Power Dissipation :

26.7W

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Power Dissipation :

26.7W

Transistor Type :

LDMOS

JESD-609 Code :

e3

Factory Lead Time :

11 Weeks

Packaging :

Cut Tape (CT)

Current - Test :

250mA

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Pin Count :

14

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Voltage (Vdss) :

25V

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

7A

Number of Terminations :

5

Base Part Number :

PD84008

Gain :

15.5dB

Gate to Source Voltage (Vgs) :

15V

Transistor Application :

AMPLIFIER

Power - Output :

2W