PDTC123EMB

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Base Part Number :

PDTC123

Max Power Dissipation :

250mW

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Package / Case :

3-XFDFN

Collector Emitter Breakdown Voltage :

50V

Pin Count :

3

Resistor - Base (R1) :

2.2 k Ω

Element Configuration :

Single

Terminal Position :

BOTTOM

Number of Pins :

3

Min Operating Temperature :

-65°C

Transition Frequency :

230MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

2.2 k Ω

JESD-609 Code :

e3

Max Collector Current :

100mA

Frequency - Transition :

230MHz

Transistor Type :

NPN - Pre-Biased

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Radiation Hardening :

No

Published :

2009

Collector Emitter Voltage (VCEO) :

150mV

Transistor Application :

SWITCHING

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA