PH2369,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

500mW

Transition Frequency :

500MHz

Packaging :

Tube

Transistor Type :

NPN

Collector-Base Capacitance-Max :

4pF

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

JESD-609 Code :

e3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

ROHS3 Compliant

Published :

2009

Voltage - Collector Emitter Breakdown (Max) :

15V

Current - Collector Cutoff (Max) :

400nA ICBO

Number of Elements :

1

Terminal Position :

BOTTOM

Number of Terminations :

3

Reach Compliance Code :

Unknown

HTS Code :

8541.21.00.75

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Pin Count :

3

JESD-30 Code :

O-PBCY-T3

Terminal Finish :

Matte Tin (Sn)

Turn Off Time-Max (toff) :

20ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Configuration :

Single

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

VCEsat-Max :

0.25 V

Mounting Type :

Through Hole

Frequency - Transition :

500MHz

Power Dissipation-Max (Abs) :

0.5W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

200mA

Polarity/Channel Type :

NPN

Turn On Time-Max (ton) :

10ns

Transistor Element Material :

SILICON