PMDXB550UNEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

670m Ω @ 590mA, 4.5V

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

4 Weeks

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drain Current-Max (Abs) (ID) :

0.59A

Number of Terminations :

6

Power - Max :

285mW

Number of Elements :

2

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

1.05nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

30.3pF @ 15V

Terminal Form :

NO LEAD

Reference Standard :

IEC-60134

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.9Ohm

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Package / Case :

6-XFDFN Exposed Pad

JESD-30 Code :

R-PDSO-N6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Max Power Dissipation :

285mW

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

590mA