PMDXB600UNEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

265mW

Rds On (Max) @ Id, Vgs :

620m Ω @ 600mA, 4.5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

6-XFDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

600mA

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Fall Time (Typ) :

51 ns

Max Dual Supply Voltage :

20V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

21.3pF @ 10V

Surface Mount :

yes

Power - Max :

265mW

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Turn-Off Delay Time :

19 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Case Connection :

DRAIN

FET Feature :

Logic Level Gate

Turn On Delay Time :

5.6 ns

Number of Elements :

2

Pin Count :

6

Rise Time :

9.2ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

950mV @ 250μA

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Number of Pins :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6