PMST6428,115
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- Mfr.Part #
- PMST6428,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST6428 - SMALL SI
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- HTS Code :
- 8541.21.00.95
- ECCN Code :
- EAR99
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 700MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Max Frequency :
- 700MHz
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Datasheets
- PMST6428,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6428,115 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
PMST6428,115 Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6428,115 Applications
There are a lot of Nexperia USA Inc.
PMST6428,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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