PMSTA05,115
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- Mfr.Part #
- PMSTA05,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSTA05 - SMALL SIGNAL
- Stock
- 2,443
- In Stock ：
- 2,443
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Base Part Number :
- PMSTA05
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2010
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 60V
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 4V
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Datasheets
- PMSTA05,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA05,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
PMSTA05,115 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMSTA05,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA05,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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