PN100A
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- Mfr.Part #
- PN100A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 1,376
- In Stock ：
- 1,376
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Collector-Base Capacitance-Max :
- 4.5pF
- Frequency :
- 250MHz
- Mount :
- Through Hole
- Max Collector Current :
- 500mA
- Packaging :
- Bulk
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.2 V
- Element Configuration :
- Single
- Transition Frequency :
- 250MHz
- Weight :
- 201mg
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Base Part Number :
- PN100
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 50nA
- Gain Bandwidth Product :
- 250MHz
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 400mV
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- hFE Min :
- 300
- Datasheets
- PN100A
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN100A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 200mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PN100A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
PN100A Applications
There are a lot of ON Semiconductor
PN100A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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