PSMN004-60B,118

- Mfr.Part #
- PSMN004-60B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 2,113





- In Stock :
- 2,113
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Published :
- 2009
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 25A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 230W Tc
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 60V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- HTS Code :
- 8541.29.00.75
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 168nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8300pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 75A
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 400A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 12 Weeks
- Datasheets
- PSMN004-60B,118

N-Channel Tape & Reel (TR) 3.6m Ω @ 25A, 10V ±20V 8300pF @ 25V 168nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN004-60B,118 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.Peak drain current for this device is 400A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
PSMN004-60B,118 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 75A
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
PSMN004-60B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN004-60B,118 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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