PSMN005-55B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

230W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 25A, 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 5V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Number of Terminations :

2

Number of Elements :

1

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

268 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

240A

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0067Ohm

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

75A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Series :

TrenchMOS™

Vgs (Max) :

±15V

ECCN Code :

EAR99

Pin Count :

3

Case Connection :

DRAIN