PSMN004-60B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

168nC @ 10V

Avalanche Energy Rating (Eas) :

500 mJ

Number of Elements :

1

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

75A

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Voltage (Vdss) :

60V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Published :

2009

Power Dissipation-Max :

230W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.29.00.75

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pin Count :

3

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 25A, 10V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON