RGTH40TS65GC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

22ns/73ns

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Continuous Collector Current :

20A

Max Power Dissipation :

144W

Number of Pins :

3

Collector Emitter Breakdown Voltage :

650V

Collector Emitter Saturation Voltage :

1.6V

Number of Terminations :

3

Published :

2014

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Time :

47 ns

Factory Lead Time :

17 Weeks

IGBT Type :

Trench Field Stop

Gate Charge :

40nC

Collector Emitter Voltage (VCEO) :

650V

Test Condition :

400V, 20A, 10 Ω, 15V

Turn Off Time-Nom (toff) :

141 ns

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

80A

Packaging :

Tube

Weight :

38.000013g

Element Configuration :

Single

Operating Temperature :

-40°C~175°C TJ

REACH SVHC :

Unknown

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Max Collector Current :

40A

Mount :

Through Hole

Pbfree Code :

yes

Power - Max :

144W

Transistor Element Material :

SILICON